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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB775 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -85V(Min) *Good Linearity of hFE *High Current Capability *Wide Area of Safe Operation *Complement to Type 2SD895 APPLICATIONS *Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT -100 V -85 V -6 V -6 A -10 A 60 W .cn mi e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -40~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -50mA ; RBE= IC= -5mA; IE= 0 IE= -5mA; IC= 0 IC= -4A; IB= -0.4A B 2SB775 MIN -85 -100 -6 TYP. MAX UNIT V V V -2.0 -1.5 V V A A IC= -1A; VCE= -5V VCB= -40V; IE=0 Output Capacitance Current-Gain--Bandwidth Product w w w. sem isc VEB= -4V; IC=0 IC= -1A; VCE= -5V IC= -3A; VCE= -5V VCB= -10V; ftest= 1.0MHz IC=-1A; VCE= -5V IC= -1A ,RL= 20, IB1= -IB2= -0.1A,VCC=-20V .cn i 60 20 160 18 0.12 1.29 0.36 -100 -100 200 pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time s s s hFE-1 Classifications D 60-120 E 100-200 isc Websitewww.iscsemi.cn 2 |
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